for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com 11 11 - 66 linear & power amplifiers - smt hmc415lp3 / 415lp3e gaas ingap hbt mmic power amplifier, 4.9 - 5.9 ghz v03.0605 general description features functional diagram the hmc415lp3 & HMC415LP3E are high effi- ciency gaas ingap heterojunction bipolar tran- sistor (hbt) mmic power amplifi ers which operate between 4.9 and 5.9 ghz. the amplifi er is pack- aged in a low cost, leadless surface mount pack- age with an exposed base for improved rf and thermal performance. with a minimum of external components, the amplifi er provides 20 db of gain, +26 dbm of saturated power, and 34% pae from a +3v supply voltage. vpd can be used for full power down or rf output power/current control. for +15 dbm ofdm output power (64 qam, 54 mbps), the hmc415lp3 & HMC415LP3E achieve an error vector magnitude (evm) of 3.7% meeting 802.11a linearity requirements. gain: 20 db 34% pae @ psat = +26 dbm 3.7% evm @ pout = +15 dbm with 54 mbps ofdm signal supply voltage: +3v power down capability low external part count electrical specifi cations, t a = +25 c, vs = 3v, vpd = 3v typical applications this amplifi er is ideal for use as a power amplifi er for 4.9 - 5.9 ghz applications: ? 802.11a wlan ? hiperlan wlan ? access points ? unii & ism radios parameter min. typ. max. min. typ. max. min. typ. max. units frequency range 4.9 - 5.1 5.1 - 5.4 5.4 - 5.9 ghz gain 18 20 18.5 20.5 16 19 db gain variation over temperature 0.04 0.05 0.04 0.05 0.04 0.05 db / c input return loss 10 9 8 db output return loss 10 12 8 db output power for 1db compression (p1db) icq = 285 ma icq = 200 ma 20 22.5 22.0 20.5 23.0 22.5 18 21.5 21.0 dbm saturated output power (psat) 25.5 26 24 dbm output third order intercept (ip3) 28 31 29 32 27 30 dbm error vector magnitude (54 mbps ofdm signal @ +15 dbm pout) icq = 200 ma 3.7 % noise figure 6 6 6 db supply current (icq) vpd = 0v/3v 0.002 / 285 0.002 / 285 0.002 / 285 ma control current (ipd) vpd = 3v 7 7 7 ma switching speed ton, toff 45 45 45 ns
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com linear & power amplifiers - smt 11 11 - 67 input return loss vs. temperature output return loss vs. temperature broadband gain & return loss gain vs. temperature p1db vs. temperature psat vs. temperature -25 -20 -15 -10 -5 0 5 10 15 20 25 345678 s21 s11 s22 response (db) frequency (ghz) 0 2 4 6 8 10 12 14 16 18 20 22 24 4.8 5 5.2 5.4 5.6 5.8 6 +25 c +85 c -40 c gain (db) frequency (ghz) 10 12 14 16 18 20 22 24 26 28 30 4.8 5 5.2 5.4 5.6 5.8 6 +25 c +85 c -40 c p1db (dbm) frequency (ghz) -20 -15 -10 -5 0 4.8 5 5.2 5.4 5.6 5.8 6 +25 c +85 c -40 c return loss (db) frequency (ghz) 10 12 14 16 18 20 22 24 26 28 30 4.8 5 5.2 5.4 5.6 5.8 6 +25 c +85 c -40 c psat (dbm) frequency (ghz) -20 -15 -10 -5 0 4.8 5 5.2 5.4 5.6 5.8 6 +25 c +85 c -40 c return loss (db) frequency (ghz) hmc415lp3 / 415lp3e gaas ingap hbt mmic power amplifier, 4.9 - 5.9 ghz v03.0605
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com 11 11 - 68 linear & power amplifiers - smt power compression @ 5.2 ghz output ip3 vs. temperature noise figure vs. temperature gain & power vs. supply voltage reverse isolation vs. temperature power down isolation vs. temperature 0 4 8 12 16 20 24 28 32 36 -12-10-8-6-4-2024681012 pout (dbm) gain (db) pae (%) pout (dbm), gain (db), pae (%) input power (dbm) 20 22 24 26 28 30 32 34 36 38 40 4.8 5 5.2 5.4 5.6 5.8 6 +25 c +85 c -40 c oip3 (dbm) frequency (ghz) -50 -40 -30 -20 -10 0 4.8 5 5.2 5.4 5.6 5.8 6 +25 c +85 c -40 c isolation (db) frequency (ghz) 18 19 20 21 22 23 24 25 26 27 28 2.7 3 3.3 gain p1db psat gain (db), p1db (dbm), psat (dbm) vcc supply voltage (vdc) -50 -40 -30 -20 -10 0 4.8 5 5.2 5.4 5.6 5.8 6 +25 c +85 c -40 c isolation (db) frequency (ghz) 0 1 2 3 4 5 6 7 8 9 10 4.8 5 5.2 5.4 5.6 5.8 6 +25 c +85 c -40 c noise figure (db) frequency (ghz) hmc415lp3 / 415lp3e gaas ingap hbt mmic power amplifier, 4.9 - 5.9 ghz v03.0605
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com linear & power amplifiers - smt 11 11 - 69 gain, power & quiescent supply current vs. vpd @ 5.2 ghz evm vs. temperature, icc = 240 ma, f = 5.2 ghz evm vs. supply current, f = 5.2 ghz 0 1 2 3 4 5 6 7 8 10 11 12 13 14 15 16 17 18 icc=160ma icc=200ma icc=240ma icc=280ma error vector magnitude (%) output power (dbm) 0 1 2 3 4 5 6 7 8 10 11 12 13 14 15 16 17 18 +25 c +85 c -40 c error vector magnitude (%) output power (dbm) 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 30 50 70 90 110 130 150 170 190 210 230 250 270 290 310 330 1.5 1.75 2 2.25 2.5 2.75 3 gain p1db psat icc gain (db), p1db (dbm), psat (dbm) icc (ma) vpd (vdc) hmc415lp3 / 415lp3e gaas ingap hbt mmic power amplifier, 4.9 - 5.9 ghz v03.0605
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com 11 11 - 70 linear & power amplifiers - smt outline drawing absolute maximum ratings notes: 1. leadframe material: copper alloy 2. dimensions are in inches [millimeters] 3. lead spacing tolerance is non-cumulative 4. pad burr length shall be 0.15mm maximum. pad burr height shall be 0.05mm maximum. 5. package warp shall not exceed 0.05mm. 6. all ground leads and ground paddle must be soldered to pcb rf ground. 7. refer to hittite application note for suggested land pattern. collector bias voltage (vcc) +5vdc control voltage (vpd) +3.5 vdc rf input power (rfin)(vs = vpd = +3.0 vdc) +13 dbm junction temperature 150 c continuous pdiss (t = 85 c) (derate 17 mw/c above 85 c) 1.105 w thermal resistance (junction to ground paddle) 59 c/w storage temperature -65 to +150 c operating temperature -40 to +85 c part number package body material lead finish msl rating package marking [3] hmc415lp3 low stress injection molded plastic sn/pb solder msl1 [1] 415 xxxx HMC415LP3E rohs-compliant low stress injection molded plastic 100% matte sn msl1 [2] 415 xxxx [1] max peak refl ow temperature of 235 c [2] max peak refl ow temperature of 260 c [3] 4-digit lot number xxxx package information hmc415lp3 / 415lp3e gaas ingap hbt mmic power amplifier, 4.9 - 5.9 ghz v03.0605 electrostatic sensitive device observe handling precautions
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com linear & power amplifiers - smt 11 11 - 71 pin number function description interface schematic 1vcc power supply voltage for the fi rst amplifi er stage. an external bypass capacitor of 330 pf is required as shown in the application schematic. 2, 3, 5, 6, 7, 8, 9, 12, 13, 15, 16 gnd ground: backside of package has exposed metal ground slug that must be connected to ground thru a short path. vias under the device are required. 4 rfin this pin is ac coupled and matched to 50 ohms from 5.0 to 6.0 ghz. 10, 11 rfout rf output and dc bias for the output stage. 14 vpd power control pin. for maximum power, this pin should be connected to 3.0v. a higher voltage is not recommended. for lower idle current, this voltage can be reduced. pin descriptions hmc415lp3 / 415lp3e gaas ingap hbt mmic power amplifier, 4.9 - 5.9 ghz v03.0605
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com 11 11 - 72 linear & power amplifiers - smt evaluation pcb the circuit board used in the fi nal application should use rf circuit design techniques. signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be con- nected directly to the ground plane similar to that shown. a sufficient number of via holes should be used to connect the top and bottom ground planes. the evaluation board should be mounted to an appropriate heat sink. the evaluation circuit board shown is available from hittite upon request. list of materials for evaluation pcb 105173 [1] item description j1 - j2 pcb mount sma rf connector j3 2 mm dc header c1 - c3 330 pf capacitor, 0603 pkg. c4 2.2 f capacitor, tantalum c5 0.5 pf capacitor, 0603 pkg. c6 7.0 pf capacitor, 0402 pkg. l1 3.0 nh inductor, 0805 pkg. u1 hmc415lp3 / HMC415LP3E amplifi er pcb [2] 104723 eval board [1] reference this number when ordering complete evaluation pcb [2] circuit board material: rogers 4350 hmc415lp3 / 415lp3e gaas ingap hbt mmic power amplifier, 4.9 - 5.9 ghz v03.0605
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com linear & power amplifiers - smt 11 11 - 73 application circuit note 1: c1 should be located < 0.1? (2.54mm) from pin 1 (vcc) note 2: c3 should be located < 0.1? (2.54mm) from l1. recommended component values l1 3.0 nh c1, c2, c3 330 pf c4 2.2 f c5 0.5 pf c6 7.0 pf hmc415lp3 / 415lp3e gaas ingap hbt mmic power amplifier, 4.9 - 5.9 ghz v03.0605
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